Anisotropic-Strain-Induced Band Gap Engineering in Nanowire-Based Quantum Dots
نویسندگان
چکیده
منابع مشابه
Strain-Induced Band Gap Engineering in Selectively Grown GaN-(Al,Ga)N Core-Shell Nanowire Heterostructures.
We demonstrate the selective area growth of GaN-(Al,Ga)N core-shell nanowire heterostructures directly on Si(111). Photoluminescence spectroscopy on as-grown nanowires reveals a strong blueshift of the GaN band gap from 3.40 to 3.64 eV at room temperature. Raman measurements relate this shift to compressive strain within the GaN core. On the nanoscale, cathodoluminescence spectroscopy and scann...
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ژورنال
عنوان ژورنال: Nano Letters
سال: 2018
ISSN: 1530-6984,1530-6992
DOI: 10.1021/acs.nanolett.7b05402